IRLR3705ZPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

PD - 95956A
IRLR3705ZPbF
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
IRLU3705ZPbF
HEXFET^® Power MOSFET
D
V_DSS = 55V
R_DS(on) = 8.0mΩ
Description
This HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
I_D = 42A
S
Absolute Maximum Ratings
D-Pak
I-Pak
IRLR3705ZPbF IRLU3705ZPbF
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Max.
89
63
42
360
130
Units
A
W
Linear Derating Factor
V_GS
d E _{AS (Thermally limited)}
h E_AS (Tested )
Ù I_AR
g E _AR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
0.88
± 16
110
190
See Fig.12a, 12b, 15, 16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
R_θJC
R_θJA
R_θJA
Parameter
j Junction-to-Case
ij Junction-to-Ambient (PCB mount)
j J un c tion -to -A m b ie nt
HEXFET^® is a registered trademark of International Rectifier.
Typ.
–––
–––
–––
Max.
1.14
40
110
Units
°C/W
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1
10/01/10