IRLR3636PBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Optimized for Logic Level Drive
l Very Low R_DS(ON) at 4.5V V_GS
l Superior R*Q at 4.5V V_GS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 96224
IRLR3636PbF
IRLU3636PbF
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
60V
5.4m:
c ^6.8m:
99A
S
I_{D (Package Limited)}
50A
D
G
Gate
S
S
D
G
G
D-Pak
I-Pak
IRLR3636PbF IRLU3636PbF
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 25°C
I_DM
d ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
P_D @T_C = 25°C
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
e E_{AS (Thermally limited)}
Single Pulse Avalanche Energy
d I_AR
Avalanche Current
d E_AR
Repetitive Avalanche Energy
Thermal Resistance
R_θJC
R_θJA
Symbol
Parameter
k Junction-to-Case
j Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
www.irf.com
Max.
99 c
70 c
50
396
143
0.95
±16
22
-55 to + 175
300 (1.6mm from case)
170
See Fig.14, 15, 22a, 22b
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
02/06/09