IRLR3110ZTRPBF Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
Description
G
Specifically designed for Industrial applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Industrial applications
and a wide variety of other applications.
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C _{Continuous Drain Current, VGS @ 10V} (Silicon Limited)
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C _{Power Dissipation}
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d ^EAS (Thermally limited) Single Pulse Avalanche Energy
E_AS (Tested )
h Single Pulse Avalanche Energy Tested Value
I_AR
Ù Avalanche Current
E_AR
g Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
j Junction-to-Case
R_θJA
ij Junction-to-Ambient (PCB mount)
R_θJA
j Junction-to-Ambient
HEXFET^® is a registered trademark of International Rectifier.
www.irf.com
PD - 97175B
IRLR3110ZPbF
IRLU3110ZPbF
HEXFET^® Power MOSFET
D
V_DSS = 100V
R_DS(on) = 14mΩ
S
D-Pak
I-Pak
IRLR3110ZPbF _IRLU3110ZPbF
Max.
63
45
42
250
140
0.95
±16
110
140
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y 10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
1.05
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
11/30/09