IRLR3103 Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A⑤)

PD - 9.1333B
PRELIMINARY
IRLR/U3103
HEXFET^® Power MOSFET
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR3103)
l Straight Lead (IRLU3103)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Description
D
V_DSS = 30V
G
R_DS(on) = 0.019Ω
S
I_D = 46A…
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
D -PA K
TO -252A A
I-PAK
TO -2 5 1 AA
ID @ TC = 25°C
ID @ TC = 100°C
I_DM
PD @TC = 25°C
V_GS
EAS
I_AR
E_AR
dv/dt
TJ
T _STG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚‡
Avalanche Current‡
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
46…
29…
220
69
0.56
±16
240
34
6.9
2.0
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Min.
Typ.
R_θJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
––––
––––
––––
––––
R_θJA
Junction-to-Ambient
––––
––––
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Max.
1.8
50
110
Units
°C/W
8/7/96