IRLR2908TRPBF Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
G
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET ® Power MOSFET utilizes the latest processing techniques
to achieve extremely low on-resistance per silicon area. Additional features
of this HEXFET power MOSFET are a 175°C junction operating temperature,
low RθJC, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared,
or wave soldering techniques. The straight lead version (IRFU series) is
for through-hole mounting applications. Power dissipation levels up to 1.5
watts are possible in typical surface mount applications.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (See Fig. 9)
™ ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Maximum Power Dissipation
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
dv/dt
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
i Single Pulse Avalanche Energy Tested Value
™ Avalanche Current
h Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJC
R_θJA
Junction-to-Case
jà Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
www.irf.com
PD - 95552B
IRLR2908PbF
IRLU2908PbF
HEXFET^® Power MOSFET
D
V_DSS = 80V
R_DS(on) = 28mΩ
I_D = 30A
S
D-Pak
I-Pak
IRLR2908PbF IRLU2908PbF
Max.
39
28
30
150
120
0.77
± 16
180
250
See Fig.12a,12b,15,16
2.3
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
1.3
40
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
10/01/10