IRLR2705PBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

PD - 95062A
IRLR2705PbF
IRLU2705PbF
l Logic-Level Gate Drive
l Ultra Low On-Resistance
HEXFET^® Power MOSFET
l Surface Mount (IRLR2705)
l Straight Lead (IRLU2705)
D
V_DSS = 55V
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
l Lead-Free
Description
R_DS(on) = 0.040Ω
I_D = 28A…
S
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D-Pak
TO-252AA
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
28
20
110
68
0.45
± 16
110
16
6.8
5.0
-55 to + 175
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
R_θJC
Junction-to-Case
–––
R_θJA
Case-to-Ambient (PCB mount)**
–––
R_θJA
Junction-to-Ambient
–––
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Max.
2.2
50
110
I-Pak
TO-251AA
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
1/11/05