IRLR120NPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

IRLR120NPbF
IRLU120NPbF
l Surface Mount (IRLR120N)
l Straight Lead (IRLU120N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve the lowest possible
on-resistance per silicon area. This benefit, combined with the
fast switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient device for use in a wide variety of
applications.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight lead
version (IRFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.5 watts are possible in typical
surface mount applications.
G
D
HEXFET^® Power MOSFET
D
V_DSS = 100V
R_DS(on) = 0.185Ω
I_D = 10A
S
S
G
D-Pak
IRLR120NPbF
S
D
G
I-Pak
IRLU120NPbF
Base Part Number
IRLR120NPbF
Package Type
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tape and Reel Left
3000
Tape and Reel Right 3000
IRLU120NPbF
IPak
Tube
75
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Orderable Part Number
Note
IRLR120NPbF
IRLR120NTRPbF
IRLR120NTRLPbF
IRLR120NTRRPbF
IRLU120NPbF
EOL notice # 289
Max.
10
7.0
35
48
0.32
± 16
85
6.0
4.8
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
3.1
50
110
Units
°C/W
1
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July 9, 2014