IRLP3034PBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

PD - 96230
IRLP3034PbF
Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
G
l Hard Switched and High Frequency Circuits
Benefits
l Optimized for Logic Level Drive
l Very Low R_DS(ON) at 4.5V V_GS
l Superior R*Q at 4.5V V_GS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET^® Power MOSFET
D
V_DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
40V
1.4m:
c ^1.7m:
327A
S
I_{D (Package Limited)} 195A
D
S
D
G
TO-247AC
IRLP3034PbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 25°C
I_DM
d ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
e E_{AS (Thermally limited)} Single Pulse Avalanche Energy
d I_AR
Avalanche Current
d E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
j Junction-to-Case
R_θCS
Case-to-Sink, Flat, Greased Surface
R_θJA
Junction-to-Ambient
D
Drain
Max.
c 327
c 232
195
1308
341
2.3
±20
4.6
-55 to + 175
300
x x 10lbf in (1.1N m)
224
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.24
–––
Max.
0.44
–––
40
S
Source
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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1
04/21/09