IRLMS6802TRPBF Datasheet, PDF (1/7 Pages) International Rectifier – Ultra Low On-Resistance

l Ultra Low On-Resistance
l P-Channel MOSFET
D
l Surface Mount
l Available in Tape & Reel
D
l Lead-Free
G
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6™ package with its customized leadframe
produces a HEXFET^® power MOSFET with R_DS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. The unique thermal design and R_DS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
PD- 94897
IRLMS6802PbF
HEXFET^® Power MOSFET
A
1
6
D
V_DSS = -20V
2
5
D
3
4
S
Top View
R_DS(on) = 0.050Ω
Micro6ä
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
-20
-5.6
-4.5
-45
2.0
1.3
0.016
31
± 12
-55 to + 150
Max.
62.5
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
1/18/05