 English |
|
|
|
|
|
|
|
| IRLMS6702 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
| |||
|
PD - 91414C
IRLMS6702
HEXFET® Power MOSFET
l Generation V Technology
l Micro6 Package Style
l Ultra Low RDS(on)
l P-Channel MOSFET
D
1
D
2
6
D
5
D
VDSS = -20V
G
3
4
S
Description
Fifth Generation HEXFET® power MOSFETs from
Top View
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
RDS(on) = 0.20â¦
The Micro6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
Micro6
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
Gate to Source Voltage
Peak Diode Recovery dv/dt Â
Junction and Storage Temperature Range
Max.
2.4
1.9
13
1.7
13
± 12
5.0
55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction to Ambient Â
www.irf.com
Min.
Typ.
Max
75
Units
°C/W
1
3/18/04
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese