IRLMS4502 Datasheet, PDF (1/7 Pages) International Rectifier – HEXFET Power MOSFET

l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
PD- 93759B
IRLMS4502
HEXFET^® Power MOSFET
D
1
D
2
A
6
D
5
D
V_DSS = -12V
G
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications..
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and R_DS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
3
4
S
Top View
R_DS(on) = 0.042Ω
Micro6ä
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
-12
-5.5
-4.4
-44
1.7
1.1
0.013
28
± 12
-55 to + 150
Max.
75
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
01/13/03