IRLMS2002TR Datasheet, PDF (1/8 Pages) International Rectifier – Ultra Low On-Resistance

l Ultra Low On-Resistance
l N-Channel MOSFET
D
l Surface Mount
l Available in Tape & Reel
D
l 2.5V Rated
G
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6 package with its customized leadframe
produces a HEXFET^ power MOSFET with R_DS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and R_DS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
PD- 93758D
IRLMS2002
HEXFET^® Power MOSFET
A
1
6
D
V_DSS = 20V
2
5
D
3
4 _{S RDS(on) = 0.030Ω}
Top View
Micro6
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
6.5
5.2
20
2.0
1.3
0.016
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
62.5
Units
°C/W
1
01/13/03