IRLML6402PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Ultra Low On-Resistance

IRLML6402PbF
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
G1
l Available in Tape and Reel
l Fast Switching
l Lead-Free
S2
l RoHS Compliant, Halogen-Free
Description
These P-Channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET^® power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for use in battery
and load management.
A thermally enhanced large pad leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power MOSFET with the
industry's smallest footprint. This package, dubbed the Micro3™, is ideal
for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics and PCMCIA
cards. The thermal resistance and power dissipation are the best available.
HEXFET^® Power MOSFET
V_DSS = -20V
3D
R_DS(on) = 0.065Ω
Micro3™
Base Part Number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
IRLML6402TRPbF
Micro3_™ (SOT-23)
Tape and Reel
3000
IRLML6402TRPbF
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-3.7
-2.2
-22
1.3
0.8
0.01
11
± 12
-55 to + 150
Units
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
Typ.
75
Max.
100
Units
°C/W
1
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April 28, 2014