IRLML6401PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Ultra Low On-Resistance

l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
G1
l Available in Tape and Reel
l Fast Switching
l 1.8V Gate Rated
S2
l Lead-Free
l RoHS Compliant, Halogen-Free
Description
These P-Channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET^® power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power MOSFET with the
industry's smallest footprint. This package, dubbed the Micro3™, is ideal for
applications where printed circuit board space is at a premium. The low profile
(<1.1mm) of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
IRLML6401PbF
HEXFET^® Power MOSFET
V_DSS = -12V
3D
R_DS(on) = 0.05Ω
Micro3™
Base Part Number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
IRLML6401TRPbF
Micro3_™ (SOT-23)
Tape and Reel
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
3000
IRLML6401TRPbF
Max.
-12
-4.3
-3.4
-34
1.3
0.8
0.01
33
± 8.0
-55 to + 150
Units
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
Typ.
75
Max.
100
Units
°C/W
1
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April 28, 2014