IRLML6401GPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET

Power MOSFET

PD - 96160
IRLML6401GPbF
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
*
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l 1.8V Gate Rated
6
l Lead-Free
l Halogen-Free
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET^® power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3™, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
www.irf.com
HEXFET^® Power MOSFET
V_DSS = -12V
'
R_DS(on) = 0.05Ω
Micro3™
Max.
-12
-4.3
-3.4
-34
1.3
0.8
0.01
33
± 8.0
-55 to + 150
Units
V
A
W
W/°C
mJ
V
°C
Typ.
75
Max.
100
Units
°C/W
1
07/22/08