IRLML6344PBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFETPower MOSFET

V_DS
V_{GS Max}
R_{DS(on) max}
(@V_GS = 4.5V)
R_{DS(on) max}
(@V_GS = 2.5V)
30
V
± 12
V
29
mΩ
37
mΩ
PD - 97585
IRLML6344TRPbF
HEXFET^® Power MOSFET
G1
S2
3D
Micro3^TM (SOT-23)
IRLML6344TRPbF
Application(s)
• Load/ System Switch
Features and Benefits
Low R_DSon (<29mΩ)
Industry-standard SOT-23 Package
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer Qualification
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_A = 70°C
Continuous Drain Current, V_GS @ 10V
I_DM
Pulsed Drain Current
P_D @T_A = 25°C
Maximum Power Dissipation
P_D @T_A = 70°C
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
T_J, T_STG
Junction and Storage Temperature Range
Thermal Resistance
Symbol
R_θJA
R_θJA
Parameter
e Junction-to-Ambient
f Junction-to-Ambient (t<10s)
results in
Benefits
Lower Conduction Losses
Multi-vendor compatibility
Environmentally friendly
Increased Reliability
Max.
30
5.0
4.0
25
1.3
0.8
0.01
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Typ.
–––
–––
Max.
100
99
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through „ are on page 10
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1
10/28/10