IRLML6302PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – ULTRA LOW ON RESISFANCE

l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l Lead-Free
l RoHS Compliant, Halogen-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power MOSFETs are
well known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the standard
SOT-23 package to produce a HEXFET Power MOSFET with the
industry's smallest footprint. This package, dubbed the Micro3, is
ideal for applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it to fit
easily into extremely thin application environments such as portable
electronics and PCMCIA cards.
G1
S2
IRLML6302PbF
HEXFET^® Power MOSFET
V_DSS = -20V
3D
R_DS(on) = 0.60Ω
Micro3^TM
Base Part Number
IRLML6302TRPbF
Package Type
Micro3_™ (SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML6302TRPbF
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
-0.78
-0.62
-4.9
540
4.3
± 12
-5.0
-55 to + 150
Units
A
mW
mW/°C
V
V/ns
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambient „
Typ.
–––
Max.
230
Units
°C/W
1
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April 28, 2014