IRLML5203PBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – Ultra Low On-Resistance

l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l RoHS Compliant, Halogen-Free
Description
These P-channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve the extremely low
on-resistance per silicon area. This benefit provides the
designer with an extremely efficient device for use in battery
and load management applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce a
HEXFET Power MOSFET with the industry's smallest footprint.
This package, dubbed the Micro3^TM, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
V_DSS
-30V
G1
S2
IRLML5203PbF
HEXFET^® Power MOSFET
R_DS(on) max (mW)
98@V_GS = -10V
165@V_GS = -4.5V
I_D
-3.0A
-2.6A
3D
Micro3^TM
Base Part Number
IRLML5203TRPbF
Package Type
Micro3_™ (SOT-23)
Standard Pack
Form
Quantity
Tape and Reel 3000
Orderable Part Number
IRLML5203TRPbF
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-3.0
-2.4
-24
1.25
0.80
10
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
Max.
100
1
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Units
°C/W
April 28, 2014