IRLML5103PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – ULTRA LOW ON RESISFANCE

IRLML5103PbF
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l Lead-Free
l RoHS Compliant, Halogen-Free
HEXFET^® Power MOSFET
G1
V_DSS = -30V
3D
S2
R_DS(on) = 0.60Ω
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro3™
Base Part Number
IRLML5103TRPbF
Package Type
Micro3_™ (SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML5103TRPbF
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
-0.76
-0.61
-4.8
540
4.3
± 20
-5.0
-55 to + 150
Units
A
mW
mW/°C
V
V/ns
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambient „
Typ.
–––
Max.
230
Units
°C/W
1
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April 24, 2014