IRLML2803GPBF_11 Datasheet, PDF (1/8 Pages) International Rectifier – Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET

l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l Lead-Free
l Halogen-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint.This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The
low profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
PD - 96164A
IRLML2803GPbF
HEXFET^® Power MOSFET
G1
V_DSS = 30V
3D
S2
R_DS(on) = 0.25Ω
Micro3™
Absolute Maximum Ratings
Parameter
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
V_GS
E_AS
dv/dt
T_{J ,}T_STG
Gate-to-Source Voltage
g Single Pulse Avalanche Energy
d Peak diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
1.2
0.93
7.3
540
4.3
±20
3.9
5.0
-55 to + 150
Units
A
mW
mW/°C
V
mJ
V/ns
°C
Thermal Resistance
Parameter
R_θJA
f Maximum Junction-to-Ambient
www.irf.com
Typ.
–––
Max.
230
Units
°C/W
1
12/13/11