IRLML2502PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Ultra Low On-Resistance

IRLML2502PbF
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l Lead-Free
l RoHS Compliant, Halogen-Free
HEXFET^® Power MOSFET
G1
V_DSS = 20V
3D
R_DS(on) = 0.045Ω
S2
Description
These N-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET^® power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3™, is ideal for applications where printed circuit
board space is at a premium. The low profile (<1.1mm) of the Micro3
allows it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Micro3™
Base Part Number
IRLML2502TRPbF
Package Type
Micro3_™ (SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML2502TRPbF
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
Max.
20
4.2
3.4
33
1.25
0.8
0.01
± 12
-55 to + 150
Typ.
75
Max.
100
Units
V
A
W
W/°C
V
°C
Units
°C/W
1
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April 24, 2014