IRLML2502GPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PD - 96163
IRLML2502GPbF
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l Lead-Free
l Halogen-Free
HEXFET^® Power MOSFET
*
V_DSS = 20V
'
6
R_DS(on) = 0.045Ω
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET^® power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3™, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Micro3™
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
4.2
3.4
33
1.25
0.8
0.01
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
www.irf.com
Typ.
75
Max.
100
Units
°C/W
1
07/22/08