IRLML2244TRPBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFETpower MOSFET

V_DS
V_{GS Max}
R_{DS(on) max}
(@V_GS = -4.5V)
R_{DS(on) max}
(@V_GS = -2.5V)
-20
V
± 12
V
54
mΩ
95
mΩ
PD - 97631
IRLML2244TRPbF
HEXFET^® Power MOSFET
G1
3D
S2
Micro3^TM (SOT-23)
IRLML2244TRPbF
Application(s)
• System/Load Switch
Features and Benefits
Features
Low R_DS(on) ( ≤ 54mΩ)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Benefits
Lower switching losses
Multi-vendor compatibility
results in Easier manufacturing
⇒ Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
Max.
V_DS
Drain-Source Voltage
-20
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ -4.5V
-4.3
I_D @ T_A = 70°C
Continuous Drain Current, V_GS @ -4.5V
-3.4
I_DM
Pulsed Drain Current
-18
P_D @T_A = 25°C
Maximum Power Dissipation
1.3
P_D @T_A = 70°C
Maximum Power Dissipation
0.8
Linear Derating Factor
0.01
V_GS
T_J, T_STG
Gate-to-Source Voltage
Junction and Storage Temperature Range
± 12
-55 to + 150
Thermal Resistance
Symbol
R_θJA
R_θJA
Parameter
e Junction-to-Ambient
f Junction-to-Ambient (t<10s)
Typ.
–––
–––
Max.
100
99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through „ are on page 10
www.irf.com
Units
V
A
W
W/°C
V
°C
Units
°C/W
1
1/24/11