IRLML0100TRPBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

PD - 97157
IRLML0100TRPbF
HEXFET^® Power MOSFET
V_DS
100
V
V_{GS Max}
± 16
V
G1
R_{DS(on) max}
(@V_GS = 10V)
220 m:
R_{DS(on) max}
235 m:
S2
(@V_GS = 4.5V)
3D
Micro3^TM (SOT-23)
IRLML0100TRPbF
Application(s)
• Load/ System Switch
Features and Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1
Benefits
results in
⇒
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
V_GS
T_J, T_STG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
R_θJA
R_θJA
Parameter
e Junction-to-Ambient
f Junction-to-Ambient (t<10s)
Max.
100
1.6
1.3
7.0
1.3
0.8
0.01
± 16
-55 to + 150
Typ.
–––
–––
Max.
100
99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through „ are on page 10
www.irf.com
Units
V
A
W
W/°C
V
°C
Units
°C/W
1
11/24/09