IRLML0030PBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – ADVANCED PROCESS TECHNOLOGY

V_DS
V_{GS Max}
R_{DS(on) max}
(@V_GS = 10V)
R_{DS(on) max}
(@V_GS = 4.5V)
30
V
± 20
V
27
mΩ
40
mΩ
PD - 96278B
IRLML0030TRPbF
HEXFET^® Power MOSFET
G1
S2
3D
Micro3^TM (SOT-23)
IRLML0030TRPbF
Application(s)
• Load/ System Switch
Features and Benefits
Features
Low R_DS(on) ( ≤ 27mΩ)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Industrial qualification
Benefits
Lower switching losses
Multi-vendor compatibility
results in Easier manufacturing
⇒ Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_A = 70°C
Continuous Drain Current, V_GS @ 10V
I_DM
Pulsed Drain Current
P_D @T_A = 25°C
Maximum Power Dissipation
P_D @T_A = 70°C
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
T_J, T_STG
Junction and Storage Temperature Range
Thermal Resistance
Symbol
R_θJA
R_θJA
Parameter
e Junction-to-Ambient
f Junction-to-Ambient (t<10s)
Max.
30
5.3
4.3
21
1.3
0.8
0.01
± 20
-55 to + 150
Typ.
–––
–––
Max.
100
99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through „ are on page 10
www.irf.com
Units
V
A
W
W/°C
V
°C
Units
°C/W
1
02/29/12