IRLL024ZPBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – ADVANCED PROCESS TECHNOLOGY

Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free
Description
This HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
PD - 95990A
IRLL024ZPbF
HEXFET^® Power MOSFET
D
V_DSS = 55V
R_DS(on) = 60mΩ
I_D = 5.0A
S
SOT-223
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 25°C
Parameter
i Continuous Drain Current, V_GS @ 10V (Silicon Limited)
i Continuous Drain Current, V_GS @ 10V
™ Pulsed Drain Current
i Power Dissipation
j Power Dissipation
i Linear Derating Factor
V_GS
Gate-to-Source Voltage
d EAS (Thermally limited) Single Pulse Avalanche Energy
E_AS (Tested )
h Single Pulse Avalanche Energy Tested Value
I_AR
Ù Avalanche Current
E_AR
g Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
i Junction-to-Ambient (PCB mount, steady state)
R_θJA
j Junction-to-Ambient (PCB mount, steady state)
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Max.
5.0
4.0
40
2.8
1.0
0.02
± 16
21
38
See Fig.12a, 12b, 15, 16
-55 to + 150
Typ.
–––
–––
Max.
45
120
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
09/27/10