IRLL024ZPBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 95990
IRLL024ZPbF
AUTOMOTIVE MOSFET
HEXFET^® Power MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free
D
V_DSS = 55V
R_DS(on) = 60mΩ
I_D = 5.0A
S
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 150°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an ex-
tremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
SOT-223
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 25°C
Parameter
i Continuous Drain Current, V_GS @ 10V (Silicon Limited)
i Continuous Drain Current, V_GS @ 10V
™ Pulsed Drain Current
i Power Dissipation
j Power Dissipation
i Linear Derating Factor
V_GS
Gate-to-Source Voltage
d EAS (Thermally limited) Single Pulse Avalanche Energy
E_AS (Tested )
h Single Pulse Avalanche Energy Tested Value
I_AR
Ù Avalanche Current
E_AR
g Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
i Junction-to-Ambient (PCB mount, steady state)
R_θJA
j Junction-to-Ambient (PCB mount, steady state)
www.irf.com
Max.
5.0
4.0
40
2.8
1.0
0.02
± 16
21
38
See Fig.12a, 12b, 15, 16
-55 to + 150
Typ.
–––
–––
Max.
45
120
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
12/22/04