IRLIZ24N Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

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PD - 9.1344
HEXFET^® Power MOSFET
PRELIMINARY
l Logic-Level Gate Drive
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS …
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design for which HEXFET Power MOSFETs are
well known, provides the designer with an extremely
efficient device for use in a wide variety of applications.
IRLIZ24N
D
V_DSS = 55V
R_DS(on) = 0.06Ω
S
I_D = 14A
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
I_DM
PD @TC = 25°C
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
VGS
EAS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚†
Avalanche Current†
Repetitive Avalanche Current†
Peak Diode Recovery dv/dt Ġ
TJ
Operating Junction and
T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient
To Order
Min.
––––
––––
TO-220 FULLPAK
Max.
14
9.9
72
26
0.17
±20
68
11
4.5
4.6
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Typ.
––––
––––
Max.
5.8
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W