IRLIB9343PBF Datasheet, PDF (1/7 Pages) International Rectifier – DIGITAL AUDIO MOSFET

DIGITAL AUDIO MOSFET
PD - 95745
IRLIB9343PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Key Parameters
Amplifier Applications
l Low R_DSON for Improved Efficiency
l Low Q_g and Q_sw for Better THD and Improved
Efficiency
l Low Q_rr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
V_DS
-55
V
R_DS(ON) typ. @ V_GS = -10V
93
m:
R_DS(ON) typ. @ V_GS = -4.5V
150
m:
Q_g typ.
31
nC
T_J max
175
°C
l Repetitive Avalanche Capability for Robustness and
Reliability
D
l Lead-Free
G
S
TO-220 Full-Pak
Description
This Digital Audio HEXFET^® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
Gate-to-Source Voltage
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ -10V
I_D @ T_C = 100°C
I_DM
c ^{Continuous Drain Current, VGS @ -10V}
Pulsed Drain Current
P_D @T_C = 25°C
Power Dissipation
P_D @T_C = 100°C
Power Dissipation
Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R_θJC
R_θJA
f ^Parameter
Junction-to-Case
f Junction-to-Ambient
Notes  through … are on page 7
www.irf.com
Max.
-55
±20
-14
-10
-60
33
20
0.26
-40 to + 175
10 (1.1)
Typ.
–––
–––
Max.
3.84
65
Units
V
A
W
W/°C
°C
y y lbf in (N m)
Units
°C/W
1
8/23/04