IRLIB4343PBF Datasheet, PDF (1/7 Pages) International Rectifier – DIGITAL AUDIO MOSFET

PD - 95755
DIGITAL AUDIO MOSFET _IRLIB4343PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Key Parameters
Amplifier Applications
l Low R_DSON for Improved Efficiency
l Low Q_g and Q_sw for Better THD and Improved
Efficiency
V_DS
55
V
R_DS(ON) typ. @ V_GS = 10V
42
m:
R_DS(ON) typ. @ V_GS = 4.5V
57
m:
l Low Q_rr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
Q_g typ.
T_J max
28
nC
175
°C
l Repetitive Avalanche Capability for Robustness and
Reliability
l Lead-Free
D
G
S
TO-220 Full-Pak
Description
This Digital Audio HEXFET^® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θJA
f Junction-to-Case
f Junction-to-Ambient
Max.
55
±20
19
13
80
39
20
0.26
-40 to + 175
x x 10lb in (1.1N m)
Typ.
–––
–––
Max.
3.84
65
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through … are on page 7
www.irf.com
1
8/24/04