IRLI3803 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Isolated Package
l High Voltage Isolation = 2.5KVRMS …
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 5.0V
ID @ TC = 100°C
I_DM
PD @TC = 25°C
Continuous Drain Current, V_GS @ 5.0V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
V_GS
EAS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚†
Avalanche Current†
Repetitive Avalanche Current
Peak Diode Recovery dv/dt Ġ
T_J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient
PD - 9.1320B
IRLI3803
HEXFET^® Power MOSFET
D
V_DSS = 30V
R_DS(on) = 0.006Ω
G
I_D = 76A
S
TO-220 FULLPAK
Max.
76
54
470
63
0.42
±16
610
71
6.3
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Min.
––––
––––
Typ.
––––
––––
Max.
2.4
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97