IRLHS6376PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

V_DS
V_GS
R_{DS(on) max}
(@V_GS = 4.5V)
R_{DS(on) max}
(@V_GS = 2.5V)
I_D
(@T_c(Bottom) = 25°C)
30
V
±12
V
63
mΩ
82
mΩ
d 3.4
A
PD - 97607A
IRLHS6376PbF
HEXFET^® Power MOSFET
D1
G2
S2
D1
D2
S1
G1
D2
2mm x 2mm Dual PQFN
Applications
• Charge and discharge switch for battery application
• Load/System Switch
Features and Benefits
Features
Low R_DSon (≤ 63mΩ)
Low Thermal Resistance to PCB (≤ 19°C/W)
Low Profile (≤ 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Orderable part number Package Type
IRLHS6376TRPBF
IRLHS6376TR2PBF
PQFN Dual 2mm x 2mm
PQFN Dual 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_D @ T_C(Bottom) = 25°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
c ^{Continuous Drain Current, VGS @ 4.5V (Package Limited)}
Pulsed Drain Current
f Power Dissipation
f Power Dissipation
f Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Notes  through † are on page 2
www.irf.com
Max.
30
±12
3.6d
2.9
7.6d
4.9d
3.4d
30
1.5
6.6
0.012
-55 to + 150
Units
V
A
W
W/°C
°C
1
07/19/11