IRLHS6342PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

V_DS
V_GS
R_{DS(on) max}
(@V_GS = 4.5V)
Q_{g (typical)}
I_D
(@T_{C (Bottom)} = 25°C)
30
±12
15.5
11
12i
V
V
mΩ
nC
A
Applications
• Charge and discharge switch for battery application
• System/Load Switch
PD - 96339A
IRLHS6342PbF
TOP VIEW
HEXFET^® Power MOSFET
D1
D2
G3
6D
D
5D
S
4S
D
D
D
G
D
D
S
S
2mm x 2mm PQFN
Features and Benefits
Features
Low R_DSon (≤ 15.5mΩ)
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLHS6342TRPBF
IRLHS6342TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom)= 70°C
I_D @ T_C(Bottom) = 25°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V (Wirebond Limited)}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Notes  through ‡ are on page 2
www.irf.com
Max.
30
±12
8.7
6.9
19hi
15hi
12i
76
2.1
1.3
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
1
02/25/11