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IRLHS6276PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Compatible with Existing Surface Mount Techniques
VDS
VGS
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
ID
(@Tc(Bottom) = 25°C)
20
V
±12
V
45
mΩ
62
mΩ
d 3.4
A
IRLHS6276PbF
HEXFET® Power MOSFET
D1
G2
S2
D1
D2
S1
G1
D2
2mm x 2mm Dual PQFN
Applications
• Charge and discharge switch for battery application
• Load/System Switch
Features and Benefits
Features
Low RDSon (≤ 45mΩ)
Low Thermal Resistance to PCB (≤ 19°C/W)
Low Profile (≤ 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
results in
⇒
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Orderable part number
Package Type
IRLHS6276TRPBF
IRLHS6276TR2PBF
PQFN Dual 2mm x 2mm
PQFN Dual 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
c Continuous Drain Current, VGS @ 4.5V (Package Limited)
Pulsed Drain Current
f Power Dissipation
f Power Dissipation
f Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
20
±12
4.5d
3.6d
9.6d
6.1d
3.4d
40
1.5
6.6
0.012
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 2
1
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January 13, 2014