IRLHS6242PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

V_DS
V_GS
R_{DS(on) max}
(@V_GS = 4.5V)
R_{DS(on) max}
(@V_GS = 2.5V)
I_D
(@T_{C (Bottom)} = 25°C)
20
V
±12
V
11.7
mΩ
15.5
mΩ
12d
A
Applications
• Charge and discharge switch for battery application
• System/Load Switch
PD - 97582B
IRLHS6242PbF
HEXFET^® Power MOSFET
D
D
D
G
D
D
S
S
2mm x 2mm PQFN
Features and Benefits
Features
Low R_DSon (≤ 11.7mΩ)
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
results in
⇒
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Orderable part number
IRLHS6242TRPBF
IRLHS6242TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 70°C
I_D @ T_C(Bottom) = 25°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
i Continuous Drain Current, V_GS @ 4.5V
i Continuous Drain Current, VGS @ 4.5V
c ^{Continuous Drain Current, VGS @ 4.5V (Package Limited)}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Max.
20
±12
10
8.3
22d
18d
12d
88
1.98
9.6
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through ‡ are on page 2
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1
02/23/2011