IRLHM620PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET

Power MOSFET

PD - 97565A
V_DS
V_GS max
R_{DS(on) max}
(@V_GS = 4.5V)
R_{DS(on) max}
(@V_GS = 2.5V)
Q_{g (typical)}
I_D
(@T_c(Bottom) = 25°C)
20
V
±12
V
D5
2.5
mΩ
D6
D7
3.5
mΩ
D8
52
nC
40h
A
Applications
• Battery Operated DC Motor Inverter MOSFET
• Secondary Side Synchronous Rectification MOSFET
Features and Benefits
Features
Low R_DSon (<2.5mΩ)
Low Thermal Resistance to PCB (<3.4°C/W)
Low Profile (<1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRLHM620PbF
HEXFET^® Power MOSFET
4G
3S
2S
1S
3.3mm x 3.3mm PQFN
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRLHM620TRPBF
IRLHM620TR2PBF
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
c ^{Continuous Drain Current, VGS @ 4.5V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Notes  through … are on page 8
www.irf.com
Max.
20
±12
26
21
40
40
160
2.7
37
0.022
-55 to + 150
Note
Units
V
A
W
W/°C
°C
1
11/4/2010