IRLH5036PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Secondary Side Synchronous Rectification

V_DS
R_{DS(on) max}
(@V_GS = 4.5V)
Q_{g (typical)}
R_{G (typical)}
I_D
(@T_mb = 25°C)
60 V
5.5 mΩ
44 nC
1.2 Ω
h 100 A
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Features
Low RDSon (< 5.5 mΩ @ Vgs = 4.5V )
Low Thermal Resistance to PCB (< 0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRLH5036PbF
HEXFET^® Power MOSFET
PQFN 5X6 mm
results in
⇒
Benefits
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLH5036TRPbF
IRLH5036TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_mb = 25°C
I_D @ T_mb = 100°C
I_DM
P_D @T_A = 25°C
P_D @ T_mb = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Notes  through † are on page 9
1
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Max.
60
± 16
20
16
100h
100h
400
3.6
160
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
May 20, 2015