IRLF120 Datasheet, PDF (1/7 Pages) International Rectifier – HEXFET TRANSISTORS THRU-HOLE (TO-39)

PD - 90639A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^TRANSISTORS
THRU-HOLE (TO-39)
Product Summary
Part Number BVDSS RDS(on)
IRLF120
100V 0.35Ω
ID
5.3A
IRLF120
100V, N-CHANNEL
The Logic Level ‘L’ series of power MOSFETs are de-
signed to be operated with level logic gate-to-source
voltage of 5V. In addition to the well established
characterstics of HEXFETs^, they have the added ad-
vantage of providing low drive requirements to inter-
face power loads to logic level IC’s and microprocessors.
Fields of applications include: high speed power appli-
cations such as switching regulators, switching con-
verters, motor drivers, solenoid and relay drivers and
drivers for high power bipolar switching transistors re-
quiring high speed and low gatedrive voltage.
The HEXFET technology is the key to International
Rectifier’s advanced line of logic level power MOSFET
transistors. The efficient geometry and unique process-
ing of the HEXFET achieve very low on-state resistance
combined with high transconductance and great de-
vice ruggedness.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Low Drive Requirements
n Execellent Temperature Stability
n Fast Switching Speeds
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
._{Absolute Maximum Ratings}
Parameter
ID @ VGS = 5.0V, TC = 25°C Continuous Drain Current
ID @ VGS = 5.0V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
5.3
3.4
A
21
20
W
0.16
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±10
120
5.3
2.0
5.5
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
V
mJ
A
mJ
V/ns
o_C
g
For footnotes refer to the last page
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1
08/08/01