IRLBL1304 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET® Power MOSFET

PD- 91843A
IRLBL1304
l >1mm lower profile than D²Pak
l Same footprint as D²pak
l Logic Level Gate
l Surface mount
l Ultra Low On-Resistance
G
l Fully Avalanche Rated
l 50% greater current in typ. application
condition vs. D²Pak
HEXFET^® Power MOSFET
D
V_DSS = 40V
R_DS(on) = 0.0045Ω
I_D = 185A…
S
Description
The HEXFET^® MOSFET is the most popular power MOSFET in the world.
This particular HEXFET^® MOSFET is in the SuperD²Pak^TM and has the same
outline and pinout as the standard D²Pak but has increased current handling
capability and >1mm lower profile. This makes it ideal to reduce component
count in multiparallel D²Pak operation, reduce system power dissipation or
upgrade existing design.
This package has also been designed to meet automotive qualification
standard Q101 and can be used with normal surface mouting equipment
and has the same temperature profile and recommendations as the
commonly used D²Pak.
Super-D²Pak^TM
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V†
Continuous Drain Current, V_GS @ 10V†
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient
* Current capability in normal application, see Fig.9.
www.irf.com
Max.
185, pkg limited to 95A*
130, pkg limited to 95A*
740
300
2.0
± 16
1160
100
30
5.0
-55 to + 175
260 (1.6mm from case )
Typ.
–––
–––
Max.
0.50
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
W
1
2/16/00