IRLBD59N04E Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

l Integrated Temperature Sensing Diode
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fully Avalanche Rated
l Zener Gate Protected
Description
The IRLBD59N04E is a 40V, N-channel HEXFET^®
power MOSFET with gate protection provided by
integrated back to back zener diodes. Temperature
sensing is given by the change in forward voltage drop
of two antiparallel electrically isolated poly-silicon diodes.
The IRLBD59N04E provides cost effective temperature
sensing for system protection along with the quality and
ruggedness you expect from a HEXFET power MOSFET.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
I_G
V_ESD
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
V_GS Clamp Current
Electrostatic Votage Rating‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
R_θJC
R_θJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD -93910
IRLBD59N04E
HEXFET^® Power MOSFET
V_DSS = 40V
R_DS(on) = 0.018Ω
I_D = 59A†
5 Lead-D²Pak
Max.
59†
41
230
130
0.89
± 10
320
35
13
2.2
± 50
± 2.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
mA
kV
°C
°C
Typ.
–––
–––
Max.
1.12
40
Units
°C/W
1
4/11/00