IRLBA1304P Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET® Power MOSFET

l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Same outline as TO-220
l 50% greater current in typ.
application conditions vs. TO-220
G
l Fully Avalanche Rated
q Purchase IRLBA1304/P for solder plated option.
PD- 91842A
IRLBA1304
HEXFET^® Power MOSFET
D
V_DSS = 40V
R_DS(on) = 0.004Ω
I_D = 185A…
S
Description
The HEXFET^® is the most popular power MOSFET in the world.
This particular HEXFET^® is in the Super220^TM and has the same outline and
pinout as the industry standard TO-220. It has increased current handling
capability over both the TO-220 and the much larger TO-247 package. This
makes it ideal to reduce component count in multiparalled TO-220 applications,
reduce system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has also been designed to meet
automotive qualification standard Q101.
Super - 220
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Max.
185, pkg limited to 95A*
130, pkg limited to 95A*
740
300
2.0
± 16
1160
100
30
5.0
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
N
Thermal Resistance
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.5
–––
Max.
0.5
–––
58
Units
°C/W
* Current capability in normal application, see Fig.9.
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9/14/99