IRLB8748PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

PD - 96231
IRLB8748PbF
Applications
l Optimized for UPS/Inverter Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial use
Benefits
l Very Low RDS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
V_DSS
30V
HEXFET^® Power MOSFET
R_DS(on) max Qg
4.8m:
15nC
D
G
Gate
DS
G
TO-220AB
IRLB8748PbF
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
c Pulsed Drain Current
h Maximum Power Dissipation
h Maximum Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
i ^{Soldering Temperature, for 10 seconds}
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
h Junction-to-Case
R_θCS
R_θJA
Case-to-Sink, Flat Greased Surface
g Junction-to-Ambient
Max.
30
± 20
92f
65
78
370
75
38
0.5
-55 to + 175
300 (1.6mm from case)
y y 10 lbf in (1.1N m)
Units
V
A
W
W/°C
°C
Typ.
–––
0.5
–––
Max.
2.0
–––
62
Units
°C/W
Notes through ‡ are on page 9
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1
04/22/09