IRLB3813PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

PD - 97407
IRLB3813PbF
Applications
l Optimized for UPS/Inverter Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Power Tools
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max
Qg (typ.)
30V 1.95mΩ@V_GS = 10V 57nC
D
Benefits
l Very Low R_DS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
G
Gate
DS
G
TO-220AB
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
g Maximum Power Dissipation
g Maximum Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
g Junction-to-Case
R_θCS
R_θJA
Case-to-Sink, Flat Greased Surface
f Junction-to-Ambient
Notes  through † are on page 9
www.irf.com
Max.
30
± 20
h 260
h 190
1050
230
120
1.6
-55 to + 175
x x 300 (1.6mm from case)
10lb in (1.1N m)
Units
V
A
W
W/°C
°C
Typ.
–––
0.50
–––
Max.
0.64
–––
62
Units
°C/W
1
07/03/09