IRLB3036GPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PD - 96275
IRLB3036GPbF
Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
G
l Hard Switched and High Frequency Circuits
HEXFET^® Power MOSFET
D
V_DSS
60V
R_DS(on) typ.
1.9mΩ
max.
I_{D (Silicon Limited)}
c ^2.4mΩ
270A
S
I_{D (Package Limited)}
195A
Benefits
l Optimized for Logic Level Drive
l Very Low R_DS(ON) at 4.5V V_GS
l Superior R*Q at 4.5V V_GS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
G
Gate
TO-220AB
IRLB3036GPbF
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 25°C
I_DM
Continuous Drain Current, V_GS @ 10V (Package Limited)
d Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
e _{EAS (Thermally limited)} Single Pulse Avalanche Energy
d _IAR
Avalanche Current
g _EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
j Junction-to-Case
R_θCS
Case-to-Sink, Flat, Greased Surface
R_θJA
Junction-to-Ambient
Max.
270c
190c
195
1100
380
2.5
±16
8.0
-55 to + 175
300
x x 10lb in (1.1N m)
290
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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1
10/16/09