IRL8113 Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET Power MOSFET

Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 95821
IRL8113
IRL8113S
IRL8113L
HEXFET^® Power MOSFET
V_DSS R_DS(on) max Qg (Typ.)
30V 6.0m:
23nC
Benefits
l Low R_DS(on) at 4.5V V_GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL8113
D²Pak
IRL8113S
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
f Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
i Junction-to-Case
R_θCS
f Case-to-Sink, Flat Greased Surface
R_θJA
fi Junction-to-Ambient
R_θJA
gi Junction-to-Ambient (PCB Mount)
Notes  through ‡ are on page 12
www.irf.com
Max.
30
± 20
105 h
74 h
420
110
57
0.76
-55 to + 175
300 (1.6mm from case)
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.32
–––
62
40
TO-262
IRL8113L
Units
V
A
W
W/°C
°C
Units
°C/W
1
1/6/04