IRL7YS1404CM Datasheet, PDF (1/7 Pages) International Rectifier – HEXFET POWER MOSFET THRU-HOLE (Low-ohmic TO-257AA) 40V, N-CHANNEL

PD - 94676
HEXFET^® POWER MOSFET
THRU-HOLE (Low-ohmic TO-257AA)
IRL7YS1404CM
40V, N-CHANNEL
Product Summary
Part Number
IRL7YS1404CM
BVDSS
40V
RDS(on) ID
0.007Ω 20A*
Seventh Generation HEXFET^® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Low Ohmic
TO-257AA
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
Units
20*
20*
A
80
100
W
0.8
W/°C
±20
V
785
mJ
20
A
10
mJ
1.8
-55 to 150
V/ns
o_C
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
g
1
06/02/03