IRL7833 Datasheet, PDF (1/12 Pages) International Rectifier – HEXFETPower MOSFET

Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Consumer Use
Benefits
l Very Low RDS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 94668B
IRL7833
IRL7833S
IRL7833L
HEXFET^® Power MOSFET
V_DSS R_DS(on) max Qg
30V
3.8m: 32nC
TO-220AB
IRL7833
D²Pak
IRL7833S
TO-262
IRL7833L
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
™ Pulsed Drain Current
g Maximum Power Dissipation
g Maximum Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θCS
R_θJA
R_θJA
Junction-to-Case
h Case-to-Sink, Flat, Greased Surface
h Junction-to-Ambient
gà Junction-to-Ambient (PCB Mount)
Notes  through † are on page 12
www.irf.com
Max.
30
± 20
150f
110f
600
140
72
0.96
-55 to + 175
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.04
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
4/22/04