IRL630S Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)

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HEXFET^® Power MOSFET
PD - 9.1254
IRL630S
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R_DS(ON) Specified at V_GS = 4V & 5V
150°C Operating Temperature
V_DSS = 200V
R_DS(on) = 0.40Ω
I_D = 9.0A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The SMD-220 is suitable
for high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J, T_STG
Parameter
Continuous Drain Current, V_GS @ 5.0V
Continuous Drain Current, V_GS @ 5.0V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
9.0
5.7
36
74
3.1
0.59
0.025
±10
250
9.0
7.4
5.0
-55 to + 150
300 (1.6mm from case)
Thermal Resistance
Parameter
Min.
Typ.
R_θJC
R_θJA
R_θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
––––
––––
––––
––––
––––
––––
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Max.
1.7
40
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
To Order
Revision 0