IRL630 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)

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HEXFET^® Power MOSFET
PD -9.1255
IRL630
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R_DS(ON) Specified at V_GS = 4V & 5V
150°C Operating Temperature
Fast Switching
Ease of paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
V_DSS = 200V
R_DS(on) = 0.40Ω
I_D = 9.0A
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V _GS @ 5.0V
Continuous Drain Current, V _GS @ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
9.0
5.7
36
74
0.59
±10
250
9.0
7.4
5.0
-55 to + 150
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
1.7
––––
62
Units
°C/W
To Order
Revision 0