IRL6297SDPBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Charge and Discharge Switch for Battery Application

IRL6297SDPbF
DirectFET^® Dual N-Channel Power MOSFET ‚
Applications
l Charge and Discharge Switch for Battery Application
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
l Isolation Switch for Input Power or Battery Application 20V max ±12V max 3.8mΩ@4.5V 5.4mΩ@2.5V
Features and Benefits
l Environmentaly Friendly Product
Q_{g tot}
27nC
Q_gd
9.5nC
Q_gs2
1.4nC
Q_rr
21nC
Q_oss V_gs(th)
15nC 0.80V
l RoHs Compliant, Halogen Free
l Dual Common-Drain N-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
GG
D
D
SS
SA
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
DirectFET^® ISOMETRIC
SQ
SX
ST
SA
MQ
MX
MT
MP
MC
Description
The IRL6297SDPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET^®
packaging to achieve the lowest on-state resistance in a package that has the footprint smaller than an SO-8 and only 0.6 mm profile. The
DirectFET^® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET^® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
Base Part Number
IRL6297SDPbF
Package Type
DirectFET Small Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable part number
IRL6297SDTRPbF
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
Max.
20
±12
15
12
58
140
Units
V
A
20
ID = 15A
15
10
5
TJ = 125°C
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10 11 12
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
14.0
12.0 ^{ID= 12A VDS= 16V}
10.0
VDS= 10V
VDS= 4.0V
8.0
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60 70
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
1
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September 5, 2013